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Mukesh V Khare

Vice President of Semiconductor Research, IBM Research


Full biography

Dr. Mukesh V. Khare is responsible for IBM semiconductor technology research for 10 nanometer (nm) node and beyond. In his current role, he is leading IBM’s semiconductor research and Joint Development Alliance (JDA) with top semiconductor companies to define and develop a pipeline of next generation chip technologies that could be used in future IBM servers and by JDA partners.

Most recently, he led the IBM Research team which collaborated with alliance partners GlobalFoundries and Samsung to develop the industry's first 7nm node test chip with functional transistors.

Dr. Khare led the development and implementation of high-k metal gate technology, starting from fundamental research to full implementation in 32nm technology node at IBM and development alliance member companies. He and his research team also drove a three dimensional device structure innovation called FinFET that delivers superior power performance benefits to IBM servers and development alliance partners. He also led the IBM engineering team through development and qualification of IBM's 90nm Silicon on Insulator (SOI) technology from basic definition to the transfer of the technology to a 300mm manufacturing fab.  

A recipient of IBM's Corporate Award and Outstanding Technical Achievement Award, he is the program chair at the Symposia on VLSI Technology, has authored or co-authored more than 80 research papers and holds several U.S. and international patents.

Dr. Khare has held a number of engineering and executive positions at IBM since 1998. He received his M.S., M. Phil., and Ph.D. degrees from Yale University.