In 1998, IBM’s introduction of silicon-on-insulator (SOI) technology marked a fundamental advance in the way semiconductor chips are built. Since that breakthrough, generations of high-performance products, including industry-leading IBM systems, communications infrastructure gear and home entertainment gear have exploited SOI technology to raise the bar on performance.
Striking performance and power advantages make IBM SOI technology an outstanding choice for performance-driven applications. Compared with 45 nm bulk CMOS technology, IBM testing has shown that SOI technology can:
- Enhance performance by up to 30 percent or reduce power by up to 40 percent
- Reduce susceptibility to soft errors by up to 7x for embedded SRAMs and dramatically more for embedded DRAMs — by as much as 250x.
Backed by deep and broad semiconductor manufacturing expertise and extensive experience in developing advanced process technologies, IBM SOI-based offerings are designed to help you develop faster, denser and more power efficient semiconductor solutions. Now you can harness the semiconductor technology that drives some of the world’s fastest supercomputers to help you optimize silicon solutions for the home, the communications infrastructure and the cloud.
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Why Fin-on-Oxide?
Literature
IBM Cu-32 (PDF, 902KB)
One of the industry’s fastest TCAMs. AMP memory and more. Explore IBM’s 32 nm, HKMG offering.
IBM Cu-45 (PDF, 208KB)
IBM’s pioneering 45 nm, SOI-based custom logic offering.