|Dec 9, 2010||Semtech and IBM Join Forces to Develop High-Performance Integrated ADC/DSP Platform Using 3D TSV Technology (link resides outside ibm.com)|
|Dec 02, 2010||2011 Common Platform Technology Forum to Feature Leading-Edge Manufacturing Solutions from IBM, Samsung and GLOBALFOUNDRIES|
|Nov 10, 2010||Linaro gains momentum and demonstrates progress accelerating open source development (link resides outside ibm.com)|
|Nov 09, 2010||Made in IBM Labs: New Chip Technology Paves the Way to a Faster Internet|
|Sept 16, 2010||First IBM Technology for Power-Management Chips Holds Promise for Breakthroughs in Alternative Energy|
|Sept 09, 2010||Toppan Completes 22nm and 20nm Production Photomask Process through Toppan-IBM Joint Development (press release, link resides outside ibm.com)|
|Aug 9, 2010||Tektronix Commits to 200 GHz SiGe Technology for High-Speed Oscilloscopes (press release, link resides outside ibm.com)|
|Jun 28, 2010||WiSpry and IBM Collaborate to Develop Next-Generation of Tunable Mobile Terminal Front-End Technology (press release, link resides outside ibm.com)|
|Jun 23, 2010||IBM, Samsung and GLOBALFOUNDRIES Set for Fab Synchronization to Produce Advanced Chips Based on 28nm Process Technology with STMicroelectronics (press release, link resides outside ibm.com)|
|Jun 18, 2010||Infineon Announces Production of Security Chips in U.S. Foundry; IBM Burlington Plant Qualified to Supply Security Chips for Secure Government ID Programs (press release, link resides outside ibm.com)|
|Jun 14, 2010||A 32/28nm HKMG Vertically Optimized Design Platform announcement w/ARM, Samsung, GLOBALFOUNDRIES and Synopsys (press release)|
|Jun 2, 2010||Linaro unites industry leaders to foster innovation in the Linux® community through a common foundation of tools and software (press release, link resides outside ibm.com)|
|Sep 18, 2009||IBM Announces Industry's Densest, Fastest On-Chip Dynamic Memory in 32-Nanometer, Silicon-on-Insulator Technology (press release)
IBM has successfully developed a prototype of the semiconductor industry's smallest, densest and fastest on-chip dynamic memory device in next-generation, 32-nanometer, silicon-on-insulator (SOI) technology that can offer improved speed, power savings and reliability for products ranging from servers to consumer electronics.
|Sep 15, 2009||IBM Announces Highest Performance Embedded Processor for System-on-Chip Designs (press release)
IBM Corporation today announced the industry's highest performance, highest throughput processor for system-on-chip (SoC) product families in the communication, storage, consumer, and aerospace and defense markets.
|Apr 16, 2009||IBM Technology Alliance Announces Availability of Advanced 28-Nanometer, Low-Power Semiconductor Technology (press release)
In a move that signals a firm and ongoing commitment to advanced semiconductor technology leadership, IBM , Chartered Semiconductor Manufacturing Ltd. , GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28-nanometer, high-k metal gate, low-power bulk CMOS process technology.
|Mar 13, 2009||IBM Ships 50 Millionth Processor for the Nintendo Wii Game System (press release)
IBM announced that it has reached a significant milestone as the microprocessor supplier for Nintendo Co., Ltd., by completing the shipment of 50 million processors for the Wii(TM) game system, which has tremendous worldwide sales momentum.
|Feb 26, 2009||IBM and PDF Solutions Agree to Jointly Develop a Chip Design Platform for Advanced Technology Nodes (press release)
IBM and PDF Solutions, Inc. have announced an agreement to develop an integrated circuit design platform to mitigate the effects of escalating design and manufacturing process complexity at the 32-, 28-, and 22-nanometer dimensions.
|Dec 16, 2008||Toshiba, IBM, and AMD Develop World’s Smallest FinFET SRAM Cell with High-k/Metal Gate (press release)
Toshiba Corporation, IBM, and AMD announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (µm2), the world’s smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).
|May 13, 2008||IBM Offers High Performance Computing Outside the Lab (press release)
New BladeCenter QS22 Delivers Supercomputing Power for Everything From Financial Trading to Oil-Field Discovery.
|April 16, 2008||EE Times fetes ACE Award Winners at ESC: IBM wins "Innovator of the Year" Awards (press release, link resides outside of ibm.com)
ACE winners included Dan Edelstein and Satya Nitta, of IBM Research, for "Innovator(s) of the Year."
|April 14, 2008||IBM-Led Chip Alliance Delivers Major Semiconductor Performance Leap, Power Savings Using Innovative "High-K/Metal Gate" Material (press release)
IBM and its joint development partners – Chartered Semiconductor Manufacturing Ltd. (Chartered), Freescale Inc., Infineon Technologies AG, Samsung Electronics Co., Ltd. (Samsung), STMicroelectronics N.V. and Toshiba Corporation – today announced that they have collectively demonstrated significant performance and power consumption advantages over industry standards by using a breakthrough material known as "high-k/metal gate” (HKMG) on silicon manufactured at IBM's state-of-art 300 millimeter (mm) semiconductor fabrication facility in East Fishkill, N.Y. With this achievement the joint development partners are now ready for early customer engagements. Clients may now design in this leading edge, low power foundry technology in order to help speed time-to-market and help realize power-performance advantage for their products.
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