|Part number and description||00FE000 - IBM eXFlash 200 GB DDR3 Storage DIMM
00FE005 - IBM eXFlash 400 GB DDR3 Storage DIMM
|Storage type||Solid state drives|
|Write latency||3.3 μs†|
|MLC||200 GB, 400 GB (scalable across multiple memory slots)|
|Data Reliability (BER)||1 unrecoverable error in 1018 bits read|
|Endurance||10 Full Random DWPD|
|Data Fail Recovery||Flexible Redundant Array of Memory Elements|
|Power Fail Recovery||EverGuard: Backup Power Circuitry|
|Data Path Protection||DataGuard|
|Voltage||1.35 V/1.5 V|
|Shock||200g half-sine 10 msec 1 shock along each axis X, Y, Z in each direction|
|Vibration||2.17 g rms 7-800 Hz|
|Operating Temperature||0 °C to 70 °C (Internal)|
|Storage Temperature||-40 °C to 90 °C|
|Humidity||5% to 95% noncondensing relative humidity‡|
|Altitude||5486.4 m [18,000 ft]|
|Limited warranty||1-year customer replaceable unit and onsite limited warranty, next business day 9x5, service upgrades available|
* Up to stated speed. Based on internal testing; performance may vary depending upon drive capacity, host device, OS and application.
† Performance measured under lab conditions. Actual customer results may vary.
‡ ‡ Based on MIL-STD 810-F, Method 507.4.
§ MTBF – Mean Time Between Failures based on parts stress analysis.
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IBM eXFlash memory-channel storage (eXFlash DIMM)
Achieve write latency as low as 3.3 microseconds – the lowest write latency of any flash device.