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IBM CEO Palmisano, N.Y. Gov. Pataki Unveil IBM 300mm Chip Facility


EAST FISHKILL, N.Y. - 31 Jul 2002: New York State Governor George Pataki joined IBM President and Chief Executive Officer Sam Palmisano today to announce the opening of a new IBM 300 millimeter (mm) semiconductor facility, believed to be the most advanced of its kind.

The new facility is a major addition to the IBM Microelectronics business, designed to satisfy growing customer demand for IBM's leading-edge chip technologies through high-end "foundry" manufacturing services, as well as IBM's custom and standard chip offerings.

The state-of-the-art building will house both development and manufacturing, helping IBM more easily transfer its unique set of chip-making technologies into high-volume production. Work on prototype customer designs has begun and the facility is on-schedule to begin volume manufacturing later this year.

"Technology continues to be one of our cornerstones in delivering value to our customers," said Samuel J. Palmisano, IBM president and chief executive officer. "We are reinvigorating our Microelectronics business and are confident that we have the right formula of technology and expertise with a business that is focused on the strategic areas that play to our strengths."

The new 300mm facility will also play a major role in the ongoing collaboration between IBM, the State of New York and major New York universities, further establishing the region as a center for high tech talent, investment and innovation.

"IBM's investment in East Fishkill reinforces the fact that the Hudson Valley and Upstate New York are going to play a leading role in the future of high-tech research and economic development," Governor Pataki said. "The world's most technically-advanced plant that IBM built here will anchor a renaissance for our economy, attracting new business investments and new jobs for years to come. We thank IBM for their commitment and look forward to the tremendous economic benefits our partnership will bring to New York."

The new IBM 300mm semiconductor facility combines IBM's unique array of leading-edge chip-making technologies -- such as copper wiring, silicon-on-insulator (SOI) -based transistors and improved ("low-k dielectric") insulation -- with the economies of scale resulting from production of chips on larger, 300mm diameter silicon wafers.

Some facts to put the facility and its products in perspective are included below:

Contact(s) information

Michael Loughran
IBM Media Relations
(845) 892-5463
mloughra@us.ibm.com

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